InGaN/GaN micro mirror with electrostatic comb drive actuation integrated on a patterned silicon-on-insulator wafer.

Abstract

A double-sided mask process is used to define the micro actuators on a silicon-on-insulator (SOI) wafer. Then, an InGaN/GaN multilayer film was deposited on the surface of the above patterned SOI substrate by employed MBE technology. Thus, the final device consisting of comb-drive actuators, springs and micro-mirror is implemented to obtain the two-dimensional (2D) tuning effect of the mirror. The displacement response is characterized by applying voltage to the micro actuators. It shows an approximation linear relationship between the displacement and the square of applied voltage. And the influences of the cross-axis coupling effect are also measured and evaluated. Moreover, the luminous performances of the InGaN/GaN multiquantum well films were also studied by analyzing temperature-dependent and laser intensity-dependent PL spectra. The authors observed the localized state effect and/or band-gap narrowing effect which results in an S-shaped behavior with increasing temperature. The PL intensity and wavelength are also significantly affected by the excitation energy of laser.