Abstract
Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.
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