Abstract
The performance of GaN-based flip-chip light-emitting diodes (LEDs) with embedded air voids grown on a selective-area Ar-implanted sapphire (SAS) substrate was demonstrated in this letter. The GaN-based epitaxial layers grown on Ar-implanted regions exhibited lower growth rates compared with those grown on implantation-free regions. Accordingly, air voids formed over the implanted regions after merging laterally grown GaN facet fronts. The light-output power of LEDs grown on SAS was greater than that of LEDs grown on implantation-free sapphire substrates. The output power of LEDs grown on SAS was enhanced by 20% at an injection current of 700 mA. The increase in output power was mainly attributed to the scattering of light around the air voids, which increased the probability of photons escaping from the LEDs.
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