Abstract

We report the design, growth, and characterization of an AlGaInP-based VECSEL, designed to be optically-pumped with an inexpensive high power blue InGaN diode laser, for emission around 689 nm. Up to 140 mW output power is achieved in a circularly-symmetric single transverse (TEM00) and single longitudinal mode, tunable from 683 to 693 nm. With intensity stabilization of the pump diode and frequency-stabilization of the VECSEL resonator to a reference cavity via the Pound-Drever-Hall technique, we measure the power spectral density of the VECSEL frequency noise, reporting sub-kHz linewidth at 689 nm. The VECSEL relative intensity noise (RIN) is <-130 dBc/Hz for all frequencies above 100 kHz. This compact laser system is suitable for use in quantum technologies, particularly those based on laser-cooled and trapped strontium atoms.

Highlights

  • Many quantum technology systems, those based on cold atoms, are dependent on multiple laser sources to manipulate atoms, addressing numerous transitions at optical frequencies

  • We have reported the design, growth, characterization and improved performance in output power, stability and noise performance of an AlGaInP-vertical-external-cavity surface-emitting lasers (VECSELs) gain structure pumped by a high power InGaN diode laser

  • Extensively implemented in VECSELs with direct emission at near and mid-IR wavelengths, diode-pumping at visible wavelengths is more challenging, due to the relative lack of commercially-available high power devices, but in this case the necessary re-design of the gain structures to adapt to the short absorption length of the available pump wavelengths

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Summary

Introduction

Those based on cold atoms, are dependent on multiple laser sources to manipulate atoms, addressing numerous transitions at optical frequencies. In our recent work we have developed ultra-narrow linewidth AlGaInP-based VECSELs emitting at 689 nm [16], demonstrating, for the first time with this laser type, the sub-kHz linewidths required for targeting the second cooling transition of neutral strontium [30] These results were obtained by pumping with a high brightness, low noise green pump (a frequency-doubled IR VECSEL), such that further reductions in the size, weight, power, and cost (SWaP-C) of the system require the implementation of inexpensive diode-pumping. Sub-kHz linewidth (∼0.6 kHz) is inferred from the latter, achieved with simultaneous active stabilization of the pump intensity, via the diode current, and the VECSEL resonator, via the Pound-Drever-Hall technique

Gain structure design and growth
InGaN diode pump laser system
VECSEL gain structure characterization
Linewidth reduction and noise measurements
Findings
Conclusions
Full Text
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