Abstract
GaN-based light-emitting diodes (LEDs) were fabricated on nano patterned sapphire substrates (nano-PSSs) by nanoimprint (NIP) lithography. A nano-PSS with a pillar height of more than 600 nm was achieved. The surface emission of the LEDs was strongly affected by pillar height, and the surface emission intensity was highest at a pillar height of 250 nm. In contrast, the external quantum efficiency of the LEDs on the nano-PSSs with diameters of 100 and 450 nm was approximately 30% higher than that on a flat sapphire substrate, which is similar to that on a conventional PSS.
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