InGaN-based blue light-emitting diodes and laser diodes

Abstract

InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed a similar blueshift with increasing forward currents between both LEDs. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. InGaN multi-quantum-well structure laser diodes with modulation-doped strained-layer superlattice cladding layers fabricated on the ELOG substrate were demonstrated to have a lifetime of more than 8000 h.