InGaN‐based 518 and 488 nm laser diodes on c‐plane GaN substrate

Abstract

AbstractWe succeeded in fabricating InGaN‐based laser diodes (LDs) with a wavelength of 518 and 488 nm under continuous wave (cw) operation. The both LDs structures were grown on conventional c‐plane GaN substrates by metal organic chemical vapor deposition (MOCVD). The threshold current and threshold voltage were 45 mA and 5.5 V at 518 nm, 30 mA and 4.5 V at 488 nm, respectively. The lifetime test of these LDs was carried out under high driving temperature up to 80 °C in cw operation. Lifetime was estimated to be over 5000 h with an optical output power of 5 mW at 80 °C in 515–518 nm LDs from 1000 h operation, and was estimated to be over 10,000 h with an output power of 60 mW at 60 °C in 488 nm LDs from 2000 h operation.