InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

Abstract

Data on threshold currents, the differential quantum efficiency, the emission spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd)/InAsSbP double heterostructure lasers with λ=3.0–3.3 µm and a cavity length of 70–150 µm in a temperature range of 50–107 K are reported. In the experiments, the threshold currents Ith<10 mA, a total output power of 0.5 mW/facet, and a single-mode power of 0.43 mW at 77 K in the cw regime were obtained. Lasers operated in the single-mode regime at currents I≤6Ith, the spectral purity was as high as 650: 1, the tuning rate was 210 cm−1/A, and the tuning range was 10 cm−1 wide. An example of methane detection at 3028.75 cm−1 is presented.