InGaAsN on GaAs (1 1 1)B for telecommunication laser application

Abstract

In this work we present the GaAs (1 1 1)B as a candidate to develop laser devices working on the second and third fiber optic windows. We show that the ions coming from the radiofrequency plasma cell reduce the optical emission dramatically. This damage can be reduced if a magnetic field is used during the growth of the InGaAsN quantum wells, reducing the ion density impinging on the surface and improving therefore the optical quality. In addition, a lower optimum RTA temperature was found for samples with a lower ion concentration, implying a better structural quality. Finally, a lower blueshift after annealing was also found. The higher optical and structural quality of the samples grown with the magnetic field, the lower optimum RTA temperature and the reduced blueshift after anneling offer interesting perspectives to the development of long-wavelength devices using misoriented GaAs (1 1 1)B substrates.