Abstract
InGaAsN metal-semiconductor-metal (MSM) photodetectors (PDs) with modulation-doped heterostructures have been successfully fabricated. It was found from capacitance-voltage measurements that carriers were well confined. Using thermionic emission theory and measured dark currents, it was found that effective Schottky barrier heights were 0.61, 0.72, 0.50, and 0.23 eV for the MSM-PDs with Al0.2Ga0.8As cap layer doping Nd=5times1016, 9times1016, 2times1017, and 6times1017 cm-3, respectively. Furthermore, it was found that measured responsivities were 0.02, 0.14, and 0.22 A/W and for the MSM-PDs with Nd=5times1016, 9times1016, and 2times1017 cm-3, respectively
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