Abstract
We report on the growth and properties of InGaAsN/GaAsheterostructures and on their applications for lasersemitting at λ≈1.3 µm. Material growth wasperformed by molecular beam epitaxy using an RF plasma source.Broad area and ridge waveguide (RWG) laser structures based on suchquantum wells (QWs) exhibit performances that can compete with those of1.3 µm InGaAsP lasers. In particular, we have achieved300 K operation of broad area lasers at 1.3 µm withthreshold current densities down to 500 and 650 A cm-2 for 800 µm long, single and triple QWstructures. Similar structures with heat-sinking at10 °C yield a maximum CW output power of up to8 W.RWG lasers have thresholds down to 11 mA and show CW operationup to 100 °C with a T0 of up to 110 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
