Abstract
In this paper, we present the design, fabrication, and experimental characterization of a new Single-Photon Avalanche Diode (SPAD) made in InGaAs/InP for photon-counting operations up to 1700 nm. Working in gated-mode at 225 K with 5 V excess bias, this detector shows very low afterpulsing, hence the hold-off time can be set as low as a few microseconds, thus allowing high photon-counting rates (towards 1 Mcps). The timing response has a full-width at half maximum of less than 90 ps and a full-width at 1/1000 of maximum of less than 450 ps, thanks to a very fast (30 ps) exponential tail, thus allowing extremely wide dynamic ranges in time-correlated single photon counting measurements. Furthermore, such InGaAs/InP SPAD shows good photon detection efficiency ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">${>}{25\%}$</tex></formula> at 1550 nm and 40% at 1000 nm) at a moderately low dark count rate, below 100 kcps for a 25 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> active-area diameter detector. These good results are due to design and fabrication optimization.
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