Abstract
The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multiple-quantum-well (MQW) structures is presented. The absorption and refractive index changes (Δα, Δn) of In0.2Ga0.8As/GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit Δα/α0 and Δn/α0 give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
