Abstract
In this work, the In1−yGayAs1−xBix epilayers were optimized and grown successfully by V90 gas source molecular beam epitaxy (GSMBE). The effect of using an In0.53Ga0.47As buffer layer on the crystalline quality of In1−yGayAs1−xBix epilayers were investigated. With the buffer layer preparation, the surface RMS roughness value of 0.251nm, a maximum electron mobility of 5700cm2/Vs and a bulk carrier density of 2.9×1016cm3 are achieved for the In1−yGayAs1−xBix epilayer with the Bi content up to 3.1%.
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