Abstract
The effective Schottky barrier height of n-In0.53Ga0.47As is increased by a 200 nm thick Fe-doped InP layer grown by metal-organic vapour-phase epitaxy. Schottky diodes fabricated by this method exhibit an effective barrier height of 0.57 eV and a very low reverse-current density of 5*10-4 A cm-2 at 10 V. Current in the reverse direction is caused by thermionic emission, whereas a complicated transport mechanism, with generation-recombination and tunnelling components, determines the current when the structure is forward biased. Besides peaks clearly related to Fe levels in InP and In0.53Ga0.47As, deep level transient spectroscopy also shows a donor-like level with Delta Ea=0.77 eV of an origin that has so far remained unresolved.
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