Abstract
A bipolar-type resonant tunneling transistor is studied of which the base is identical to a coupled quantum well. On the basis of the InGaAs material system strained AlAs tunnel barriers and a graded InGaAlAs emitter are used. Molecular beam epitaxy growth conditions are studied, showing a specific influence of growth temperature and arsenic pressure. We find clear evidence for resonant tunneling: a saturation of the collector current and a maximum of the transconductance with increasing base-emitter bias in a three-terminal transistor structure. A corresponding effect in a phototransistor structure is found as a maximum of differential current gain with increasing incident light intensity. Room temperature and low temperature (80 K) high-frequency properties are determined and are used to estimate the resonant tunneling time.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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