InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Zhenhua Li,Gregory J Salamo,Jiang Wu,Zhiming M Wang,Aqiang Guo,Shui-Qing Yu,Shibing Li,Dongsheng Fan,Omar Manasreh

doi:10.1007/s11671-010-9605-2

Zhenhua Li, Gregory J Salamo + Show 7 more

Open Access

https://doi.org/10.1007/s11671-010-9605-2

Copy DOI

Abstract

The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Highlights

Superluminescent diodes (SLDs) have been of great interest due to various applications, such as opticalAmong the many attempts in broadening the spectral width, there have been surprisingly few, if any, efforts made on high-index substrates based SLDs
The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes
The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates

Summary

Introduction

Superluminescent diodes (SLDs) have been of great interest due to various applications, such as opticalAmong the many attempts in broadening the spectral width, there have been surprisingly few, if any, efforts made on high-index substrates based SLDs. Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. A broad photoluminescence emission peak (*950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate.

Results

Conclusion