Abstract
Using a linear graded InxGa1−xAs as the buffer layer,positive-intrinsic-negative wavelength-extendedIn0.6Ga0.4 As photodetectors with 50% cut-off wavelengthof 1.9 μm at room temperature were grown by using gas-source molecularbeam epitaxy, and their performance over a wide temperature range hasbeen extensively investigated. The detectors show typical dark currentat bias voltage 50 mV and the resistance–area product R0A of7 nA/765 Ωcm2 and 31 pA/404 kΩcm2at 290 K and 210 K, respectively. The thermal activation energy of thedark current in the temperature range 250–350 K is 0.488 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
