InGaAs/GaAs quantum wires and dots defined by low-voltage electron-beam lithography

Abstract

Low-voltage electron-beam lithography (EBL) of energies of 2.3 keV is a powerful tool for efficient exposure of poly(methylmethacrylate) resist patterned substrate, with negligible proximity effects. InGaAs/GaAs quantum wires and dots have been fabricated with lateral wire widths down to 15 nm, and dot diameters down to 37 nm, respectively. The nanostructures were defined by combining high-resolution low-voltage EBL and deep wet chemical etching. Quantum wires and dots show a dimensionality dependent photoluminescence energy blue shift of up to 12 meV, caused by lateral quantization.