Abstract
The design, fabrication and characterization of electrooptical modulators and switches based on pseudomorphic InGaAs/GaAs multiple-quantum-well (MQW) structures is presented. The absorption and refractive index changes (Δα, Δn) of In0.2Ga0.8As/GaAs MQW structures due to the quantum-confined Stark effect are examined in detail. The figures of merit Δα/α0 and Δn/α0 give information on the design of modulation and switching devices. Based on these results, we develop two types of efficient and high-speed modulators, vertical and waveguide modulators, and for the first time an InGaAs/GaAs intersectional X-type switch. Recent experimental results for each device are presented.
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