Abstract
Strained-layer InGaAs/GaAs/GalnP separated confinement heterostructure single quantum-well (SCH-SQW) lasers have been fabricated. These lasers exhibit a low threshold current density of 72 A/cm2, a high internal quantum efficiency of 90%, and a low internal waveguide loss of 8.8cm-1. The transparency current density and gain coefficient are 29 A cm-2 and 0.046cmμA-1, respectively. The characteristic temperature is between 120 and 140 K. These results obtained for InGaAs/GaAs/GalnP lasers arc comparable to the best results for InGaAs/GaAs/AlGaAs lasers.
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