Abstract
In this paper, we review and discuss the critical problems involved in the research and development of InGaAlP visible light devices along with some of our achievements. High p-doping of a cladding layer, and a multi-quantum-barrier structure improved the temperature characteristics of InGaAlP laser diodes. These techniques have made it possible to realize a high temperature CW operation above 70°C at the wavelength of 633 nm. New structure InGaAlP light-emitting diodes (LEDs) which employ an off-angle substrate and a Bragg reflector have improved both quantum efficiency and light extraction efficiency. Candera-class, high-brightness LEDs have been achieved for operation in the orange to green color region.
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