Abstract
Germanium carbon (GeC) thin films were prepared on ZnS substrates by reactive RF magnetron sputtering in Ar and CH 4 mixtures with a Ge disc as the target. H content in the films was studied as a function of the deposition parameters and low H content GeC film was obtained. RF power had a little effect on IR absorptions, hence had a little effect on H content. IR absorption of the GeC film increased a little with the increase in partial pressure of CH 4 as well as total pressure of gas mixture. Increase in substrate temperature decomposed CH 4 and CH x in the GeC film into C and H and H was desorbed from the film, lowering the IR absorption. However, high substrate temperature prevented CH 4 or CH x from adsorbing onto the substrate, which decreased C content in the GeC film and increased the film's refractive index. Higher annealing temperature of the GeC film reduced H content, but high annealing temperature (500 °C) caused the graphitization of the GeC film and destroyed its continuity.
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