Abstract
An optical beam induced contrast (OBIC) image of a gallium phosphide light emitting diode, produced using radiation of quantum energy less than the material's enery gap, shows sub-surface crystallographic defects which are not imaged with conventional OBIC. These defects show strong correspondence with a region of low intensity emission from the diode.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have