Abstract
Samples of molecular beam epitaxial GaAs grown at low temperatures doped with Be defects are studied as a function of growth temperature (TG)-by measuring their localized vibrational modes at 77K using BOMEM Fourier transform infrared spectrometer. Localized vibrational modes of9BeGa in samples grown at TG>350°C have been identified at 482 cm−1. Secondary ion mass spectroscopy measurements show that the densities of Be defects remain approximately constant as TG is lowered, however, additional structure in the9BeGa localized vibrational mode is observed. Calculations based on Green's function theory suggest that the additional structure in Be-doped LT GaAs can best be explained in terms of a complex center [9BeGa-AsGa] involving an intrinsic defect.
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