Infrared Spectroscopy Study of Edge Water Penetration at Hydrophilic Bonding Interface

Abstract

Hydrophilic wafer bonding is a process used to bond two wafers without adding material between the two surfaces. Water has a definite impact both during the bonding (bonding wave propagation, adhesion) (1) and after annealing (mechanical strength of the bonding interface, adherence) (2) during such a process. To have a better understanding of mechanisms ruling direct hydrophilic wafer bonding, it is thus important to quantify the amount of water present at the bonding interface.It is known that water is able to penetrate at the bonding interface at room temperature and 40% relative humidity. This has been demonstrated by analyzing defects with scanning acoustic microscopy (SAM) and from X-Ray Reflectivity (XRR) measurements (3,4). Kinetics observed by Tedjini et al. were consistent with a Lucas-Washburn flow through a one nm gap driven by the capillary forces of the hydrophilic surfaces.Nevertheless, no investigation of this phenomenon was performed using Fourier Transform Infra-Red Multiple Internal Reflection (FTIR-MIR) spectroscopy (5). Infrared spectroscopy of silanols, hydrogen bonded water and free water is well documented (6–8) and provides knowledge about water content and organization at the bonding interface. Here FTIR-MIR spectroscopy yields a direct measurement of the relative amount of water and its structure at the interface.More precisely this study will enable us to compare Si-Si, Si-SiO2 and SiO2-SiO2 water penetration kinetics at a fixed distance from the edge of the bonded substrates. A schematic view of the FTIR-MIR setup is shown in Figure 1 to explain the measurement principle.We report the study of water kinetics penetration at bonding interface by FTIR-MIR characterization. A Gaussian decomposition of the OH stretching absorption band signal allows identifying the contributions of silanols, surface bonded water and free liquid water as shown on Figure 2. The integral of each Gaussian peak is otherwise proportional to the relative amount of water. Surface preparation will be discussed and results compared to other characterizations techniques.REFERENCES Larrey V, Mauguen G, Fournel F, Radisson D, Rieutord F, Morales C, et al. Adhesion Energy and Bonding Wave Velocity Measurements. ECS Transactions. 23 sept 2016;75(9):145-52.Fournel F, Tedjini M, Larrey V, Rieutord F, Morales C, Bridoux C, et al. Impact of Water Edge Absorption on Silicon Oxide Direct Bonding Energy. ECS Transactions. 23 sept 2016;75(9):129-34.Tedjini M, Fournel F, Moriceau H, Larrey V, Landru D, Kononchuk O, et al. Interface water diffusion in silicon direct bonding. Appl Phys Lett. 12 sept 2016;109(11):111603.Rieutord F, Tardif S, Landru D, Kononchuk O, Larrey V, Moriceau H, et al. Edge Water Penetration in Direct Bonding Interface. ECS Trans. 24 août 2016;75(9):163-7.Rochat N, Olivier M, Chabli A, Conne F, Lefeuvre G, Boll-Burdet C. Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers. Appl Phys Lett. 2 oct 2000;77(14):2249-51.Baum M, Rébiscoul D, Juranyi F, Rieutord F. Structural and Dynamical Properties of Water Confined in Highly Ordered Mesoporous Silica in the Presence of Electrolytes. J Phys Chem C. 30 août 2018;122(34):19857-68.Caër SL, Pin S, Esnouf S, Raffy Q, Ph. Renault J, Brubach JB, et al. A trapped water network in nanoporous material: the role of interfaces. Physical Chemistry Chemical Physics. 2011;13(39):17658-66.Davis KM, Tomozawa M. An infrared spectroscopic study of water-related species in silica glasses. Journal of Non-Crystalline Solids. 2 juin 1996;201(3):177-98. Figure 1