Infrared spectroscopy of semiconductor surfaces: H-terminated silicon surfaces

Abstract

In this review, the present level of infrared spectroscopy at surfaces is described by using hydrogen-terminated silicon surfaces as model systems. Ab-initio cluster calculations are shown to provide an accurate structural description and precise vibrational frequencies for various surface configurations, and are used to interpret polarized infrared absorption spectra. A special emphasis is given to the recent discovery of chemical etching to prepare H-terminated silicon surfaces because it has greatly helped in understanding structural and dynamical properties of H-terminated silicon surfaces. In particular, both the energy and phase relaxation of the Si-H stretching vibration on the flat, ideally monohydride terminated Si(111) surface have been measured directly and evidence for vibrational energy diffusion has been obtained on vicinal, H-terminated Si(111) surfaces.