Abstract
Abstract Thin-film amorphous silicon-sulphur alloys have been prepared by the decomposition of SiH4 and H2S gas mixtures in a radio-frequency glow discharge at a substrate temperature of 250°C. The composition of the alloys was controlled by changing the H2S/SiH4 gas (volume) ratio. The infrared spectra for samples of different composition were measured. In addition to the hydrogen-induced bands at 2100, 2000, 885, 840 and 640 cm−1, new sulphur-induced bands at 480, 710 and 760 cm−1 were observed. The nature and the basic features of these bands and their evolution with composition and plasma power are discussed. The effect of sulphur on the SiH stretching frequencies is also investigated. Electrical and optical measurements show that increasing the sulphur content results in a decrease in the electrical conductivity and an increase in the optical band gap. A correlation between these measurements and the infrared spectra is established.
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