Abstract
The disilenyl, H 2SiSiH(X 2A), and the d3-isotopomer were detected for the first time via infrared spectroscopy in low temperature silane matrices upon an irradiation of the sample matrices with energetic electrons. The ν 5 fundamental was observed at 651 and 493 cm −1, respectively. In the d4-silane matrix, the ν 4 at 683 cm −1 was noticed, too. Our investigations suggest that this radical is formed via radiolysis of silylsilylene, H 3SiSiH(X 1A ′), and disilene, H 2SiSiH 2(X 1A g). The new absorption of the H 2SiSiH(X 2A) radical may be employed in future spectroscopic monitoring of chemical vapor deposition processes and in astronomical searches of silicon-bearing molecules toward the carbon star IRC + 10216.
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