Infrared spectrometric measurement of impurities in highly enriched ‘Si28’

Abstract

Within the scope of re-determining the Avogadro constant, the content of impurities in ultra-pure, mono-isotopically enriched silicon ‘Si28’ was measured by infrared spectrometry. The calibration factors required for the calculation of the concentrations from the maximum absorption coefficients had to be determined in this context for the isotopically enriched material. For this purpose a model was prepared, which enables conversion of the factors for Si with natural isotopic abundance. On the basis of these results, the concentrations of the three most decisive impurities in the enriched material were determined. These are oxygen atoms on interstitial sites and substituting carbon and boron atoms which occupy silicon sites. Whereas carbon and oxygen were measured in accordance with standardized procedures modified for the particular metrological use, the absorption measurement of the boron was carried out differently to the conventional standard. The concentrations determined for the three types of crystal impurities are high enough to make a correction of the lattice parameter for the ‘Si28’ material necessary.