Abstract
Infrared (IR) spectra of ultrathin silicon-oxide layers, grown by pulsed F2-laser (157 nm) photoinduced oxidation of H-terminated Si(111) and Si(110) in an oxygen atmosphere, were monitored in situ with monolayer sensitivity. Oxygen atoms play an essential role in this laser-induced oxidation process occurring at room temperature. The IR spectra of the various oxidation states of silicon (suboxides) in the interfacial region recorded for oxides grown by the self-limiting photochemical oxidation process are compared with those of thermal oxide layers of 22 nm thickness obtained by a top-down wet-chemical thinning procedure. The characteristic features of the suboxide spectra recorded for normal and oblique incidence of the analyzing IR beam are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
