Abstract
We report the rapid thermal crystallization of silicon films using infrared semiconductor laser. Carbon films were used on silicon films to absorb the laser light. Uniform crystalline regions were achieved by a line shape laser beam with a length of 20μm. Polycrystalline silicon thin film transistors were fabricated in crystallized regions. The effective electron carrier mobility and threshold voltage were achieved to be 130cm2/Vs and 0.4V, respectively, when the crystalline volume ratio of the silicon films was 0.95.
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