Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs

N.N Novikova,G Karczewski,I.V Kucherenko,V.A Yakovlev,S Chusnutdinow

doi:10.1051/epjconf/201713203059

Abstract

Infrared reflectivity spectra of the 700 nm thick topological insulator Pb 1-x Sn x Se films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained.

Highlights

Narrow-gap alloys type IV – VI, such as PbSnSe, PbSnTe has generated great interest from fundamental and applied points of view in the 70s-80s years of the last century
According to this formula, the values of Eg can be both positive and negative. This means that in the first case, the wave functions describing the conduction band and the valence zone at the L point have the symmetry of L- and L+
The inversion zones and their symmetries correspond to L+ and L

Summary

Introduction

Narrow-gap alloys type IV – VI , such as PbSnSe, PbSnTe has generated great interest from fundamental and applied points of view in the 70s-80s years of the last century. This means that in the first case, the wave functions describing the conduction band and the valence zone at the L point have the symmetry of L- and L+. The inversion zones and their symmetries correspond to L+ (the conduction band) and L-

Results

Conclusion