Abstract
Infrared reflection absorption spectroscopy (IRRAS) has been adopted for the high sensitive and high resolution vibrational spectrum measurements on the metal surfaces. In recent years, IRRAS using buried metal layer substrates (BML-IRRAS) has been developed. This technique provides sufficient sensitivity for the submonolayer adsorbates on the semiconductor and insulator surfaces. The synchrotron radiation stimulated process, which has characteristics of high spatial resolution, low damage, and unique reaction selectivities, is expected to realize a practical nano-process technique in future. We are developing the new BML-IRRAS technique and trying to apply it to the monitoring of the SR stimulated surface reactions. The BML-IRRAS technique is useful in the in-situ observations of the surface reaction, especially of the beam-induced reactions. In this report, our BML-IRRAS technique and recent results of our experiments using this technique with thermal and SR stimulated reaction on the hydrogen terminated Si(100) surfaces are introduced.
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