Abstract
Conditions for post-implantation capless annealing of GaAs, called infrared rapid thermal annealing (IRTA) using halogen lamps, were investigated. Si-implanted GaAs (5×1012 cm−2, 150 keV) was annealed at temperatures ranging from 700 to 1100 °C for various annealing times. Annealed GaAs at 950 °C for 2–4 s shows about 75% electrical activation and 3700 cm2/Vs electron mobility without noticeable dopant diffusion and surface decomposition. Planar metal-semiconductor field-effect transistors (MESFET’s) fabricated on the active layer formed by this annealing method show that the technique is promising as a post-implantation annealing method for the fabrication of GaAs MESFET’s and GaAs integrated circuits (IC’s).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
