Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor Deposition

Abstract

Infrared, Raman, and x‐ray diffraction measurements were used to study films obtained by chemical vapor deposition from and gases. A wide range of ratios (γ) were used to examine the existing phases inside the film, oxidation states of the oxide phases, and crystallite growth of the silicon phase on subsequent heat‐treatment. The as‐deposited films were composed of an amorphous genuine silicon phase and an oxide phase , with values from 1.38 to 1.63 for γ from 0.5 to 24. Reconstruction of both phases occurred by subsequent heat‐treatment in atmosphere. The sizes of the silicon crystallites formed in the silicon phase by subsequent heat‐treatment were related to oxygen content of the film. Comparing reported electric and optical properties with results obtained in this study, we proposed a new model of the films, in which the silicon and oxide phases formed a complicated three‐dimensional network. The model consistently explained all the observed film properties.