Abstract
Ion‐implanted polycrystalline silicon layers were annealed using the radiation from a graphite heater. 0.4 μm thick polycrystalline silicon films implanted with 40 keV P+ ions to a dose of were annealed in vacuum at 1000° – 1200°C for 10 – 60 sec. A minimum sheet resistance of 9 Ω/□ was obtained for a sample which was encapsulated with a 0.3 μm PSG film and annealed at 1200°C for 10 sec. TEM photographs show that the grain size of polycrystalline silicon grew up to around 1.0 μm in diam. The activation of the implanted phosphorus, the annealing of a damaged layer, and the increase of grain size leads to the reduction of sheet resistance of polycrystalline silicon and the increase of carrier mobility.
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