Infrared Properties of Cubic Silicon Carbide Films

Abstract

Films of cubic silicon carbide have been grown by the reaction of methane with a high-purity silicon surface at 1300\ifmmode^\circ\else\textdegree\fi{}C. Windows of SiC were produced by etching away portions of the silicon. Transmission and reflection measurements in the range 1 to 15 microns have been carefully analyzed according to classical dispersion theory. The dispersion parameters have been determined for the fundamental resonance at 12.60 microns. The dispersion parameters are essentially the same as those for the ordinary ray in the hexagonal $\ensuremath{\alpha}$-II form.