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Abstract
GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.
Highlights
There has been a great interest in infrared detectors due to its many potential applications in night vision imaging, safety, remote sensing, food inspection, biology, and other fields [1,2,3]
The resultant heterogeneous structure depends on van der Waals interaction [10], and there is no requirement for lattice matching of the different materials
High-resolution transmission electron microscopy (HRTEM) images of the annealed GeTe film are shown in Fig. 1 e and f
Summary
There has been a great interest in infrared detectors due to its many potential applications in night vision imaging, safety, remote sensing, food inspection, biology, and other fields [1,2,3]. Photovoltaic infrared detectors take advantage of minority carrier effects leading to short response time, which is ideal for imaging and sensing applications. There have been much research activities in developing various heterogeneous structures based on two-dimensional materials grown on different substrates [6,7,8,9]. The resultant heterogeneous structure depends on van der Waals interaction [10], and there is no requirement for lattice matching of the different materials
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