Abstract
We report on a detailed study of photoluminescence (PL) from the dilute bismide alloy GaSb:Bi. Epitaxial layers were grown from the liquid phase onto GaSb (100) substrates and PL was obtained in the near infrared spectral range ( λ∼1.6 μm). The addition of 0.8 at% Bi to the Ga growth solution resulted in incorporation of 0.4 at% Bi into the solid alloy and a reduction of 40 meV in band gap energy as well as an increase of luminescence from the sample. Structural analysis confirmed the successful incorporation of Bi consistent with an increase in lattice parameter. However, introduction of more Bi resulted in no further band gap narrowing.
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