Abstract
Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.
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