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Abstract
The infrared responsivity is measured at low temperature on Schottky barrier detectors having ultrathin (3–20 nm) PtSi, IrSi, and compound silicide films as a metal electrode on p-type silicon. The total yield for internal hole photoemission is 1% per incident photon for PtSi and 0.1% for IrSi at a wavelength of λ=4 μm. The cut-of wavelengths are λ=5.4 μm and λ=8.2 μm for PtSi and IrSi, respectively. The compound silicides fabricated by sequential evaporation of Pt and Ir and subsequent annealing at T=450° C show characteristics identical to that of PtSi.
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