Abstract

HgTe colloidal quantum dots (CQDs) are appealing candidates for infrared photodetection due to their facile tuning of infrared absorption, solution-processability and compatibility with silicon electronics for imaging. Traditional HgTe CQD synthesis suffers from CQD aggregation or air-sensitive tellurium (Te) precursor. Here, monodisperse HgTe CQDs with sharp excitonic absorption edge and tunable response from 1.7 &mu;m to 6.3 &mu;m are synthesized via a ligand-engineered approach. Thanks to their accessible CQD surface, both the carrier concentration and polarity can be readily tuned by ligand-induced surface gating. The transport property studies present a record electron mobility up to 18 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Short wave infrared photodetectors achieve a high room-temperature detectivity beyond 10<sup>11</sup> Jones at the wavelength of 1550 nm. The synthesis strategy is expected to enrich the applications of HgTe CQDs and promote the fast development of CQD infrared detection technology.

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