Infra-red parametric generation: Phase mismatch condition

Abstract

An analytical investigation is made for the Infrared parametric generation in doped semiconductor plasma under phase mismatch condition. Theoretical formulations are undertaken to determine induced polarization and threshold pump field for the onset of parametric generation in semiconductor plasma medium. The origin of this nonlinear interaction lies in the second order optical susceptibility arising due to the induced nonlinear current density in piezoelectric medium. Numerical estimations are made for n- type InSb at 77 K duly irradiated by a pulsed 10.6µm CO2 laser. It is very difficult to attain exact phase matching in experimental frame so we have considered a tolerable small phase mismatch in order to attain a new result. Its effect on the Infrared parametric generation in compound semiconductor is examined through induced polarization. Transmitted intensity is determined to have an idea about conversion efficiency of the said process. Phase mismatch tends to raise the required pump field to stimulate the parametric generation. Transmitted intensity is found to decrease with coherence length lc and increase carrier concentration n0, which is favorable for improved conversion efficiency.