Abstract
The multiple-quantum-well (MQW) phototransistor is considered theoretically. The MQW phototransistor utilizes intersub-band optical absorption and exhibits giant photocurrent gain which can lead to very high responsivity and detectivity. This effect is due to the thermionic injection of hot electrons across the emitter barrier and fast electron transit through the MQW base. An analytic theory of the MQW phototransistor utilizing parameters evaluated by Monte Carlo simulation is proposed. Transition from near ballistic hot electron transport to diffusive transport decreases the responsivity but its value can be significant in this case as well.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
