Abstract
High concentration Ge-doped in CZ–Si single crystals were measured by Fourier transform infrared spectroscopy (FTIR) at room temperature (RT) and 10 K together with the SEM-energy dispersive X-ray (EDX) spectroscopy. We make use of the new peak that appears at the wave number of 710 cm −1. This peak becomes clearer with increasing concentration of Ge, the relation between absorption coefficient ( α max ), half-peak breadth ( W 1/2) and Ge concentration is determined. And the formulas of determining Ge concentration in CZ–Si single crystals by means of FTIR technology have been given at RT and 10 K. The result of error analysis indicates that FTIR technology is capable of determining the Ge concentration in CZ–Si single crystal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
