Abstract
White-light scanning interferometry is extended from the visible-light region to the infrared-light region to measure the three-dimensional (3D) topography of components. An infrared-light interference system based on a linnik-type interferometric microscope is developed according to the principle of transmission of semiconductor materials in the infrared-light region. The 3D topography is measured using the components covered with a Si or GaAs wafer based on a phase-stepping algorithm. The 3D topography can be obtained accurately and relative step heights can be determined within an error less than 3% compared with the instrument MSA 400, a well-known commercially available apparatus used in the field of 3D topography measurement.
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