Abstract
Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and H2O2, confirmed that the broad IR band originates from the Si/SiO x interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature.
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