Abstract
We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p–n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion.
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