Infrared excited state absorption of Ni2+ doped crystals

Abstract

The excited state absorption spectra of Ni2+ : MgO and Ni2+ : Gd3Ga5O12 were measured in the complete region of the infrared emission. The emission band overlaps both with the excited state absorption band and the3A2(3F) →3T2(3F) ground state absorption band. At low temperatures all bands are narrower and exhibit sharp structures, reducing the losses to the laser emission. The structure of the excited state absorption spectrum of Ni2+ : MgO at 10 K is assigned to zero phonon lines and vibrational sidebands of the T1, T2(3T1(3F)) spin-orbit components and to vibrational sidebands of the E component.